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InGaAs quantum-dot-in-ring structure by droplet epitaxy

Identifieur interne : 000B02 ( Main/Repository ); précédent : 000B01; suivant : 000B03

InGaAs quantum-dot-in-ring structure by droplet epitaxy

Auteurs : RBID : Pascal:13-0288294

Descripteurs français

Pascal (Inist)
- Point quantique, Anneau quantique, Nanomatériau, Epitaxie gouttelette, Autoassemblage, Nanostructure, Effet température, Profil profondeur, Direction cristallographique, Mécanisme formation, Cristallisation, Relaxation contrainte, Propriété mécanique, Epitaxie jet moléculaire, Arséniure d'indium, Arséniure de gallium, Nitrure de calcium, Semiconducteur III-V, InGaAs, 8107T, 8107, 8116D, 6470K.

English descriptors

KwdEn :
- Calcium nitride, Crystallization, Crystallographic direction, Depth profiles, Droplet epitaxy, Formation mechanism, Gallium arsenides, III-V semiconductors, Indium arsenides, Mechanical properties, Molecular beam epitaxy, Nanostructured materials, Nanostructures, Quantum dots, Quantum ring, Self-assembly, Stress relaxation, Temperature effects.

Abstract

The controlled fabrication of self-assembled InGaAs nanostructures i.e., quantum ring (QR) and quantum-dot-in-ring (QDIR) by droplet epitaxy is reported. The effects of crystallization temperature (170-260 C) on the nanostructure shape, dimension, density, and depth profile are investigated. The QRs transform to QDIRs when the crystallization temperature is increased. At transformation state, the QRs with distorted nanohole profile along the [1-10] crystallographic direction are observed. The formation mechanism can be explained by the competitive crystallizations in and around the nanodroplet and strain relaxation in the nanohole.

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Pascal:13-0288294

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InGaAs quantum-dot-in-ring structure by droplet epitaxy</title>
<author><name sortKey="Boonpeng, P" uniqKey="Boonpeng P">P. Boonpeng</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kiravittaya, S" uniqKey="Kiravittaya S">S. Kiravittaya</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University</s1>
<s2>Phitsanulok 65000</s2>
<s3>THA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Phitsanulok 65000</wicri:noRegion>
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</author>
<author><name sortKey="Thainoi, S" uniqKey="Thainoi S">S. Thainoi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
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<author><name sortKey="Panyakeow, S" uniqKey="Panyakeow S">S. Panyakeow</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
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<author><name sortKey="Ratanathammaphan, S" uniqKey="Ratanathammaphan S">S. Ratanathammaphan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
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<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
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<date when="2013">2013</date>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Calcium nitride</term>
<term>Crystallization</term>
<term>Crystallographic direction</term>
<term>Depth profiles</term>
<term>Droplet epitaxy</term>
<term>Formation mechanism</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Mechanical properties</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructured materials</term>
<term>Nanostructures</term>
<term>Quantum dots</term>
<term>Quantum ring</term>
<term>Self-assembly</term>
<term>Stress relaxation</term>
<term>Temperature effects</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Point quantique</term>
<term>Anneau quantique</term>
<term>Nanomatériau</term>
<term>Epitaxie gouttelette</term>
<term>Autoassemblage</term>
<term>Nanostructure</term>
<term>Effet température</term>
<term>Profil profondeur</term>
<term>Direction cristallographique</term>
<term>Mécanisme formation</term>
<term>Cristallisation</term>
<term>Relaxation contrainte</term>
<term>Propriété mécanique</term>
<term>Epitaxie jet moléculaire</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Nitrure de calcium</term>
<term>Semiconducteur III-V</term>
<term>InGaAs</term>
<term>8107T</term>
<term>8107</term>
<term>8116D</term>
<term>6470K</term>
</keywords>
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<front><div type="abstract" xml:lang="en">The controlled fabrication of self-assembled InGaAs nanostructures i.e., quantum ring (QR) and quantum-dot-in-ring (QDIR) by droplet epitaxy is reported. The effects of crystallization temperature (170-260 C) on the nanostructure shape, dimension, density, and depth profile are investigated. The QRs transform to QDIRs when the crystallization temperature is increased. At transformation state, the QRs with distorted nanohole profile along the [1-10] crystallographic direction are observed. The formation mechanism can be explained by the competitive crystallizations in and around the nanodroplet and strain relaxation in the nanohole.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>InGaAs quantum-dot-in-ring structure by droplet epitaxy</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>The 17th International Conference on Molecular Beam Epitaxy</s1>
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<fA11 i1="01" i2="1"><s1>BOONPENG (P.)</s1>
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<fA11 i1="02" i2="1"><s1>KIRAVITTAYA (S.)</s1>
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<s9>ed.</s9>
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<s9>ed.</s9>
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<fA12 i1="03" i2="1"><s1>OKUMURA (Hajime)</s1>
<s9>ed.</s9>
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<fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA14 i1="02"><s1>Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University</s1>
<s2>Phitsanulok 65000</s2>
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<sZ>2 aut.</sZ>
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<fA15 i1="01"><s1>University of Tsukuba</s1>
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<fC01 i1="01" l="ENG"><s0>The controlled fabrication of self-assembled InGaAs nanostructures i.e., quantum ring (QR) and quantum-dot-in-ring (QDIR) by droplet epitaxy is reported. The effects of crystallization temperature (170-260 C) on the nanostructure shape, dimension, density, and depth profile are investigated. The QRs transform to QDIRs when the crystallization temperature is increased. At transformation state, the QRs with distorted nanohole profile along the [1-10] crystallographic direction are observed. The formation mechanism can be explained by the competitive crystallizations in and around the nanodroplet and strain relaxation in the nanohole.</s0>
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<s5>05</s5>
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<s5>14</s5>
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<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="15" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
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<s2>NK</s2>
<s5>16</s5>
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<s2>NK</s2>
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<s5>29</s5>
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<s4>INC</s4>
<s5>46</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>8107T</s0>
<s4>INC</s4>
<s5>71</s5>
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<s5>72</s5>
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<fC03 i1="22" i2="3" l="FRE"><s0>8116D</s0>
<s4>INC</s4>
<s5>73</s5>
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<fC03 i1="23" i2="3" l="FRE"><s0>6470K</s0>
<s4>INC</s4>
<s5>74</s5>
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<fN21><s1>273</s1>
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<fN44 i1="01"><s1>OTO</s1>
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<fN82><s1>OTO</s1>
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</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE2012 International Conference on Molecular Beam Epitaxy</s1>
<s2>17</s2>
<s3>Nara JPN</s3>
<s4>2012-09-23</s4>
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InGaAs quantum-dot-in-ring structure by droplet epitaxy

InGaAs quantum-dot-in-ring structure by droplet epitaxy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri